Jiangxi Jinko Solar Energy Co., Ltd.

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1. polycrystal silicon ingot

Conductivity type:P type
Crystal characteristic:100+/-5
Resistivity:0.5-6Ohm*cm
Size:125+/-0.5
Life time:>=10us
Oxygen content:<=1.0*1018/cm3
Carbon Content:</=5.0*1016/cm3

2. polycrystal silicon wafer

Polycrystal silicon wafer
1) Type: P type-Boron doped -
2) Resistivity 0,5 -3, 3-6 Ohm*cm
3) Oxygen Content </= 8,0 x 1017 atoms/cm3
4) Carbon Content </= 1,0 x 1018 atoms/cm3
5) Lifetime >/= 2 uS
6) Size 156 x 156 +/- 0.5 ...

3. monocrystal silicon wafer

Monocrystal silicon wafer:
1)Type: P type (dopant)
2)Dimension : 125 mm x 125 mm(+/-0.5 mm)
3)Thickness : 180 um (+/-20 um)
4)Resistivity : 0.5 ohm cm - 6ohm cm
5)Life time : >=10us
6)Oxygen content : </=1.0x10~18atom/cm3
7)Carbon ...